semiconductor doping
英 [ˌsemikənˈdʌktə(r) ˈdəʊpɪŋ]
美 [ˈsemikəndʌktər ˈdoʊpɪŋ]
网络 半导体掺杂
双语例句
- Research Progress of ⅱ-ⅵ Group Semiconductor Nanocrystals Doping
Ⅱ-Ⅵ族半导体纳米晶体的掺杂研究进展 - Then we subject the semiconductor to impurity doping, which turns it into either a p-type or an n-type semiconductor.
然后我们使半导体经过渗杂，以将其转变成p型或n型半导体。 - The LB films deposited on gold comb electrode by the LB technique according to the Z-type belong to semiconductor, and their conductance can be enhanced by doping iodine.
分子在膜中主要以倾斜的方式排列。以Z型累积方式沉积于金制梳状电极上的LB膜能导电，属于半导体材料，碘掺杂可改善膜的电导。 - Research on Semiconductor Ceramic Materials: Double Donor Doping BaTiO_3
双施主掺杂BaTiO3半导体陶瓷材料的研究 - A new method of semiconductor doping& doping by electron beam has been success-fully used to fabricate boron super-shallow junction.
一种新的半导体掺杂方法&电子束掺杂法成功地用于实现掺硼浅结。 - A method is described for semiconductor Si doping of organic colloidal dopants.
描述一个有机胶体掺杂剂的半导体硅的激光辐照掺杂方法； - It takes the semiconductor monocrystalline silicon as the example to simulate, the result demonstrates that the doping density of the diffusion layer should not surpass 10~ ( 20) cm~ (-3), and the voltage achieves the biggest value under the doping density;
本文中的仿真模型以半导体单晶硅材料为基底进行模拟，模拟结果显示：表面层掺杂浓度不应超过10~（20）cm~（-3），并且在此掺杂浓度下电压达到最大； - The optical response in a shallow junction silicon photronics, which made by the semiconductor doping technique with the electron beam radiation, are investigated experimentally.
实验研究了电子束辐照诱导半导体掺杂技术制作的浅结硅光伏电池光响应特性。 - In the process of doping Zn into InP induced by the pulsed laser, the temperature of the semiconductor and metal interface is one of the most important factors which affect the depth and impurity concentration of laser inducing doping.
脉冲激光诱导InP的Zn掺杂过程中，金属-半导体分界面附近的温度是影响掺杂浓度和掺杂深度的一个重要因素。 - The progress in modification techniques of TiO2 anode is summarized. These techniques including semiconductor materials composition, gradient doping, transition metal ion doping, rare metal deposition, surface modifying and UV illuminate modifying, etc, are summarized and discussed.
综述和讨论了近年来TiO2阳极的改性技术，包括半导体复合、梯度掺杂、过渡金属离子掺杂、贵金属沉积、表面修饰以及紫外光照射改性等方面国内外研究的进展； - Phosphine ( PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition ( CVD) etc.
磷化氢（PH3）是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积（CVD）等。 - HEMT is a kind of high speed semiconductor device that bases on the heterojunction modulation doping.
高电子迁移率晶体管（HEMT）是基于异质结调制掺杂发展起来的一种高频高速半导体器件。 - Gas_sensing material of semiconductor doped SO~ ( 2-)_4 in In_2O_3 was prepared by ultrasonic dispersion dipping and the effect of SO~ ( 2-)_4 doping on the conductivity and gas_sensing properties was investigated.
用超声分散浸渍法制备了掺杂SO2-4的In2O3半导体气敏材料，并对其电导和气敏性能进行了研究。 - Measurement of the fine structure of semiconductor doping profile using C V technique
半导体掺杂分布精细结构的测量技术研究 - Diluted magnetic semiconductor is a semiconductor material in which the nonmagnetic host ions are partially substituted by transition metals or rare earths ions with low doping concentration, and the charge and spin of electrons in conventional semiconductors will be exploited.
稀磁性半导体是指：带有磁性的过渡金属或稀土金属离子低浓度掺杂，替代半导体中非磁性阳离子后形成的一类带磁性半导体材料。 - Power semiconductor device chip manufacturing process is actually repeated several times on film formation, lithography and doping process in a substrate, and its primary task is to solve the problem of film formation.
功率半导体器件芯片制造过程中实际上就是在衬底上多次反复进行的薄膜形成、光刻与掺杂等加工过程，其首要的任务是解决薄膜制备问题。 - There are many methods to improve the properties of semiconductor photocatalysts, such as elements doping, the formation of solid solution and surface modification, and elements doping have been proved to have very good performance both in experiment and theoretical study.
对半导体光催化材料性质的改进方法有很多，比如元素掺杂、形成固溶体或者表面修饰等，研究表明元素掺杂的实验和理论研究均具有较好的光吸收调控作用。 - The calculated results agree well with the experimental data. The impurity level calculation formula which established based on electronegativity can be used to provide theoretical guidance in the search of proper impurity atoms for semiconductor doping.
计算结果与实验值符合得较好，这一基于电负性的杂质能级计算公式可以为寻找合适的杂质用于半导体掺杂提供理论上的指导。 - ZnO film, a semiconductor with wide direct band gap, has been actively studied because of its potential applications. It can be used in solar cell, piezoelectric device, photoelectric device, gas sensor and UV detector and the characteristics can be modulated by appropriate doping.
ZnO薄膜是一种直接宽带隙半导体材料，具有多种用途，可广泛的应用于太阳能电池、压电薄膜、光电器件、气敏器件和紫外探测器等方面。 - On the process of semiconductor manufactory, diffusion is the way which penetrate into the silicon substrate using a constant surface concentration of the impurity diffusion at the high temperature, and then re-distribution by the second Limited source surface diffusion for the purpose to doping.
在半导体平面制造工艺上，扩散主要通过在高温环境下，利用一次恒定表面浓度扩散使杂质源渗透入硅片衬底，再通过二次有限源表面再扩散、再分布，达到掺杂的目的。 - Although semiconductor nanoparticles has been widely used in quite a lot of fields, given its unique features in electrics, optics and chemicals, there has been few researches on the usage in doping into liquid crystal materials.
尽管半导体纳米粒子已经凭借其在电学、光学及化学领域的独特性质在很多方面有了广泛的应用，但还很少有在液晶材料中掺杂的相关研究报道。 - The doping experiments of silica latex diffusion were carried out by using self-built platform for the semiconductor doping and test. A PIN structure on the SOI rib waveguide was achieved on this platform.
利用自建的半导体掺杂和测试平台进行了二氧化硅乳胶扩散掺杂的实验，利用该平台实现了SOI脊形波导两侧PIN结的制作。